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Electricity

Quantities

energy
capacity to do work
potential energy depends on position (includes chemical and phase changes)
kinetic energy depends on motion (includes thermal energy)
total energy is conserved during interactions
symbol: E
SI unit: Joule, J
power
energy per unit of time
symbol: P
SI unit: Watt, W (Joules/second)
charge
measure of electrical interaction, may be positive or negative
charges of opposite sign attract, charges of same sign repel
symbol: Q
SI unit: Coulomb, C
proton charge: e = 1.60x10-19 C
electron charge: -e = -1.60x10-19 C
current
rate at which charge moves
symbol: I
SI unit: Ampere, A (Coulombs/second)
voltage
electrical potential energy per unit of charge
symbol: V
SI unit: Volt, V (Joules/Coulomb)
resistance
ability to reduce movement of charge
symbol: R
SI unit: Ohm, Ω (Volts/Ampere)
impedance (symbol: Z) is the time-varying generalization of resistance
capacitance
ability to store charge
symbol: C
SI unit: Farad, F (Coulombs/Volt)
inductance
ability to oppose change in current
symbol: L
SI unit: Henry, H (J⋅C2/s2)
Prefixes (multipliers)
name SI symbol SI value
exa E 1018
peta P 1015
tera T 1012
giga G 109
mega M 106
kilo k 103
milli m 10-3
micro μ 10-6
nano n 10-9
pico p 10-12
femto f 10-15
atto a 10-18

Time

DC
direct current, does not change with time (approximately)
AC
alternating current, does change with time
frequency
for periodic changes, number of cycles per second
symbol: f or ν
SI unit: Hertz, Hz (cycles/second)

Relationships

resistance
V=I⋅R
capacitance
V=Q/C
inductance
V=L⋅dI/dt
energy
E=C⋅V2/2
E=L⋅I2/2
power
P=I⋅V
P=I2⋅R

Materials

conductor
freely-moving electrons carry current
typically aluminum or copper, very low resistivity
used to carry current with low voltage drop
insulator
tightly-bound electrons cannot carry current
typically plastics or ceramics, very high resistivity
used to prevent current flow
semiconductor
excess electrons in N-doped crystal lattice can carry current
missing electrons (holes) in P-doped crystal lattice can carry current
typically silicon with various doping agents
used to control currents